super fast recovery diode RFUS10TF4S l series l dimensions (unit : mm) l structure standard fast recovery l applications general rectification l features 1)single type.(to-220) 2)high switching speed l construction silicon epitaxial planer l absolute maximum ratings (tc=25 ? c) symbol limits unit v rm 430 v v r 430 v average rectified forward current io tc=82c 10 a tj 150 ? c tstg - 55 to + 150 ? c l electrical characteristics (tj=25 ? c) symbol min. typ. max. unit forward voltage v f 1.45 1.7 v i r 0.05 10 a trr 19 30 ns thermal resistance rth(j-c) 3 c/w forward current surge peak i fsm reverse voltage parameter repetitive peak reverse voltage reverse recovery time reverse current parameter junction temperature storage temperature junction to case conditions duty 0.5 60hz half sin wave, resistance load, 60hz half sin wave, non-repetitive one cycle peak value, tj=25c a conditions i f =10a v r =430v i f =0.5a,i r =1a,irr=0.25i r 80 rohm : to220nfm manufacture year manufacture week rfus10 tf4s 1/4 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RFUS10TF4S 150 160 170 180 190 200 210 220 230 240 250 f=1mhz v r =0v tj=25 c ave:182.2pf 1 10 100 1000 10000 100000 0 100 200 300 400 tj=125 c tj=25 c tj=150 c tj=75 c 0.1 1 10 100 0 1 2 3 tj=125 c tj=150 c tj=25 c tj=75 c forward voltage v f (v) v f - i f characteristics forward current:i f (a) reverse current:i r (na) reverse voltage v r (v) v r - i r characteristics 1 10 100 1000 0 5 10 15 20 25 30 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics f=1mhz 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 v f dispersion map forward voltage:v f (mv) ave:1436mv i f =10a tj=25 c 1 10 100 v r =430v tj=25 c ave:13.6na reverse current:i r (na) i r dispersion map capacitance between terminals:ct(pf) ct dispersion map 2/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RFUS10TF4S 0 50 100 150 200 250 300 ave:134.5a i fsm dispersion map its ability of peak surge forward current:i fsm (a) 8.3ms i fsm 1cyc. 0 5 10 15 20 25 30 i f =0.5a i r =1.0a irr=0.25 i r tj=25 c ave:17.9ns trr dispersion map reverse recovery time:trr(ns) 1 10 100 1000 1 10 100 peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 10 100 1000 1 10 100 peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics 0 2 4 6 8 10 c=200pf r=0 c=100pf r=1.5k ave 0.66kv ave 4.5kv electrostatic discharge test esd(kv) esd dispersion map 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 rth(j - c) time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) 3/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RFUS10TF4S 0 2 4 6 8 10 12 14 16 18 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 0 5 10 15 20 25 30 35 40 0 5 10 15 20 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics 0 2 4 6 8 10 12 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 ambient temperature:ta( c ) derating curve (io - ta) average rectified forward current:io(a) t tj=150 c d=t/t t v r io v r =215v 0a 0v average rectified forward current:io(a) case temperature:tc( c ) derating curve (io - tc) t tj=150 c d=t/t t v r io v r =215v 0a 0v 4/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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